Method for cleaning semiconductor substrate and method for fabricating semiconductor device

The present invention relates to a method for cleaning a substrate such as a semiconductor substrate for the manufacture of an integrated circuit. The method includes cleaning a semiconductor substrate with a first mixture consisting of ozone and at least one of an acid and a base, followed by a sec...

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Bibliographische Detailangaben
Hauptverfasser:	YEH, MING HSI, JANG, SYUN MING, CHOU, BO WEI, WU, SUNG HSUN, CHEN, CHAO CHENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention relates to a method for cleaning a substrate such as a semiconductor substrate for the manufacture of an integrated circuit. The method includes cleaning a semiconductor substrate with a first mixture consisting of ozone and at least one of an acid and a base, followed by a second mixture consisting of ozone and the other one of the acid and base. The cleaning mixtures can further include ultrapure water. According to one embodiment of the present invention, the mixtures can be applied on a surface of the heated substrate. The acid can be HF and the base can be NH_4OH.