Dischargeable electrical programmable read only memory (eprom) cell
The present subject matter relates to an electrical programmable read only memory (EPROM) cell. The EPROM cell comprises a semiconductor substrate and a floating gate separated from the semiconductor substrate by a first dielectric layer. A control gate is capacitively coupled to the floating gate t...
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| creator | THIN, LUI CHEAT NG, BOON BING VILLAVELEZ, REYNALDO V |
| description | The present subject matter relates to an electrical programmable read only memory (EPROM) cell. The EPROM cell comprises a semiconductor substrate and a floating gate separated from the semiconductor substrate by a first dielectric layer. A control gate is capacitively coupled to the floating gate through a second dielectric layer disposed between the floating gate and the control gate. In an example, the EPROM cell further comprises a conductive gate connected to the floating gate, wherein the conductive gate is to leak charges from the floating gate in a predetermined leak time period. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI613794BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI613794BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI613794BB3</originalsourceid><addsrcrecordid>eNrjZHB2ySxOzkgsSk9NTMpJVUjNSU0uKcpMTsxRKCjKTy9KzM0FixelJqYo5OflVCrkpubmF1UqaKQC5XM1FZJTc3J4GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakl8SLinmaGxuaWJk5MxEUoAJVkyag</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Dischargeable electrical programmable read only memory (eprom) cell</title><source>esp@cenet</source><creator>THIN, LUI CHEAT ; NG, BOON BING ; VILLAVELEZ, REYNALDO V</creator><creatorcontrib>THIN, LUI CHEAT ; NG, BOON BING ; VILLAVELEZ, REYNALDO V</creatorcontrib><description>The present subject matter relates to an electrical programmable read only memory (EPROM) cell. The EPROM cell comprises a semiconductor substrate and a floating gate separated from the semiconductor substrate by a first dielectric layer. A control gate is capacitively coupled to the floating gate through a second dielectric layer disposed between the floating gate and the control gate. In an example, the EPROM cell further comprises a conductive gate connected to the floating gate, wherein the conductive gate is to leak charges from the floating gate in a predetermined leak time period.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180201&DB=EPODOC&CC=TW&NR=I613794B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180201&DB=EPODOC&CC=TW&NR=I613794B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>THIN, LUI CHEAT</creatorcontrib><creatorcontrib>NG, BOON BING</creatorcontrib><creatorcontrib>VILLAVELEZ, REYNALDO V</creatorcontrib><title>Dischargeable electrical programmable read only memory (eprom) cell</title><description>The present subject matter relates to an electrical programmable read only memory (EPROM) cell. The EPROM cell comprises a semiconductor substrate and a floating gate separated from the semiconductor substrate by a first dielectric layer. A control gate is capacitively coupled to the floating gate through a second dielectric layer disposed between the floating gate and the control gate. In an example, the EPROM cell further comprises a conductive gate connected to the floating gate, wherein the conductive gate is to leak charges from the floating gate in a predetermined leak time period.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB2ySxOzkgsSk9NTMpJVUjNSU0uKcpMTsxRKCjKTy9KzM0FixelJqYo5OflVCrkpubmF1UqaKQC5XM1FZJTc3J4GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakl8SLinmaGxuaWJk5MxEUoAJVkyag</recordid><startdate>20180201</startdate><enddate>20180201</enddate><creator>THIN, LUI CHEAT</creator><creator>NG, BOON BING</creator><creator>VILLAVELEZ, REYNALDO V</creator><scope>EVB</scope></search><sort><creationdate>20180201</creationdate><title>Dischargeable electrical programmable read only memory (eprom) cell</title><author>THIN, LUI CHEAT ; NG, BOON BING ; VILLAVELEZ, REYNALDO V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI613794BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>THIN, LUI CHEAT</creatorcontrib><creatorcontrib>NG, BOON BING</creatorcontrib><creatorcontrib>VILLAVELEZ, REYNALDO V</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>THIN, LUI CHEAT</au><au>NG, BOON BING</au><au>VILLAVELEZ, REYNALDO V</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Dischargeable electrical programmable read only memory (eprom) cell</title><date>2018-02-01</date><risdate>2018</risdate><abstract>The present subject matter relates to an electrical programmable read only memory (EPROM) cell. The EPROM cell comprises a semiconductor substrate and a floating gate separated from the semiconductor substrate by a first dielectric layer. A control gate is capacitively coupled to the floating gate through a second dielectric layer disposed between the floating gate and the control gate. In an example, the EPROM cell further comprises a conductive gate connected to the floating gate, wherein the conductive gate is to leak charges from the floating gate in a predetermined leak time period.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Dischargeable electrical programmable read only memory (eprom) cell |
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