Method of maintaining ion implanter

Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BINNS, BRANT S, WHITE, RICHARD M, LEVAY, WILLIAM T, KOO, BON-WOONG, GAMMEL, GEORGE M
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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