Lateral double-diffused metal-oxide-semiconductor transistor device and layout pattern for ldmos transistor device

A LDMOS transistor device includes a substrate including a first insulating structure formed therein, a gate formed on the substrate and covering a portion of the first insulating structure, a drain region and a source region formed in the substrate at two respective sides of the gate, a base region...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUANG, BO JUI, CHANG, KAI CHENG, LIU, HSIAO WEN, LIN, AN HUNG, CHOU, KUN YI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!