Integrated circuit, wire-bonded package, flip-chip package, and mobile computing device

Techniques and structure are disclosed for enhancing fracture resistance of back-end interconnects and other such interconnect structures by increasing via density. Increased via density can be provided, for example, within the filler/dummified portion(s) of adjacent circuit layers within a die. In...

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Hauptverfasser: KOBRINSKY, MAURO J, BHINGARDE, SIDDHARTH B, PANTUSO, DANIEL, JEZEWSKI, CHRISTOPHER J, O'DAY, MICHAEL P
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creator KOBRINSKY, MAURO J
BHINGARDE, SIDDHARTH B
PANTUSO, DANIEL
JEZEWSKI, CHRISTOPHER J
O'DAY, MICHAEL P
description Techniques and structure are disclosed for enhancing fracture resistance of back-end interconnects and other such interconnect structures by increasing via density. Increased via density can be provided, for example, within the filler/dummified portion(s) of adjacent circuit layers within a die. In some cases, an electrically isolated (floating) filler line of an upper circuit layer may include a via which lands on a floating filler line of a lower circuit layer in a region corresponding to where the filler lines cross/intersect. In some such cases, the floating filler line of the upper circuit layer may be formed as a dual-damascene structure including such a via. In some embodiments, a via similarly may be provided between a floating filler line of the upper circuit layer and a sufficiently electrically isolated interconnect line of the lower circuit layer. The techniques/structure can be used to provide mechanical integrity for the die.
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language chi ; eng
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Integrated circuit, wire-bonded package, flip-chip package, and mobile computing device
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