Contact trenches for enhancing stress transfer in closely spaced transistors
Scalability of a strain-inducing mechanism on the basis of a stressed dielectric overlayer may be enhanced by forming a single stress-inducing layer in combination with contact trenches, which may shield a significant amount of a non-desired stress component in the complementary transistor, while al...
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| creator | HOENTSCHEL, JAN WEI, ANDY SALZ, HEIKE |
| description | Scalability of a strain-inducing mechanism on the basis of a stressed dielectric overlayer may be enhanced by forming a single stress-inducing layer in combination with contact trenches, which may shield a significant amount of a non-desired stress component in the complementary transistor, while also providing a strain component in the transistor width direction when the contact material may be provided with a desired internal stress level. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Contact trenches for enhancing stress transfer in closely spaced transistors |
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