Ion implanted selective emitter solar cells with in situ surface passivation
Solar cells and methods for their manufacture are disclosed. An example method may include providing a substrate comprising a base layer and introducing n-type dopant to the front surface of the base layer by ion implantation. The substrate may be annealed by heating the substrate to a temperature t...
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| creator | CHANDRASEKARAN, VINODH YELUNDUR, VIJAY ROHATGI, AJEET DAMIANI, BEN DAVIS, HUBERT PRESTON |
| description | Solar cells and methods for their manufacture are disclosed. An example method may include providing a substrate comprising a base layer and introducing n-type dopant to the front surface of the base layer by ion implantation. The substrate may be annealed by heating the substrate to a temperature to anneal the implant damage and activate the introduced dopant, thereby forming an n-type doped layer into the front surface of the base layer. Oxygen may be introduced during the annealing step to form a passivating oxide layer on the n-type doped layer. Back contacts may be screen-printed on the back surface of the base layer, and a p-type doped layer may be formed at the interface of the back surface of the base layer and the back contacts during firing of the back contacts. The back contacts may provide an electrical connection to the p-type doped layer. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Ion implanted selective emitter solar cells with in situ surface passivation |
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