Configuration and manufacturing method of low-resistance gate structure for semiconductor device and circuits

The present invention provides methods for fabricating devices with low resistance structures involving a lift-off process. A radiation blocking layer is introduced between two resist layers in order to prevent intermixing of the photoresists. Cavities suitable for the formation of low resistance T-...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	QIU, CINDY XING, SHIH, ISHIANG, QIU, CHUNONG, SHIH, YII
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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