Nonvolatile semiconductor memory device

This nonvolatile semiconductor memory device comprises a memory cell array configured having a plurality of memory mats arranged therein, each of the memory mats having a memory cell disposed therein at an intersection of a first line and a second line, the memory cell including a first variable res...

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1. Verfasser:	ICHIGE, MASAYUKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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creator	ICHIGE, MASAYUKI
description	This nonvolatile semiconductor memory device comprises a memory cell array configured having a plurality of memory mats arranged therein, each of the memory mats having a memory cell disposed therein at an intersection of a first line and a second line, the memory cell including a first variable resistance element. A third line extends through a plurality of the memory mats. A second variable resistance element is connected between the third line and the second line of each of the plurality of memory mats.
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subjects	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
title	Nonvolatile semiconductor memory device
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