Method of fabricating semiconductor device

A semiconductor device and a method of fabricating the same include a semiconductor substrate, a high-k dielectric pattern and a metal-containing pattern sequentially being stacked on the semiconductor substrate, a gate pattern including poly semiconductor and disposed on the metal-containing patter...

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Hauptverfasser: CHANG, CHONGKWANG, MOON, YOUNGJOON, JEONG, YEONG-JONG, KIM, DUCK-NAM
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Sprache:chi ; eng
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creator CHANG, CHONGKWANG
MOON, YOUNGJOON
JEONG, YEONG-JONG
KIM, DUCK-NAM
description A semiconductor device and a method of fabricating the same include a semiconductor substrate, a high-k dielectric pattern and a metal-containing pattern sequentially being stacked on the semiconductor substrate, a gate pattern including poly semiconductor and disposed on the metal-containing pattern, and a protective layer disposed on the gate pattern, wherein the protective layer includes oxide, nitride and/or oxynitride of the poly semiconductor.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of fabricating semiconductor device
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