A system and a method for forming semiconductor features

An inductively coupled power (ICP) plasma processing chamber for forming semiconductor features is provided. A plasma processing chamber is provided, comprising a vacuum chamber, at least one antenna adjacent to the vacuum chamber for providing inductively coupled power in the vacuum chamber, a subs...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SADJADI, S. M. REZA
Format: Patent
Sprache:chi ; eng
Schlagworte:
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