METHOD OF FORMING OPENINGS IN A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method of forming openings to a layer of a semiconductor device comprises forming a dielectric layer over the layer of the semiconductor device, and forming a mask over the dielectric layer. The mask comprises a plurality of mask openings arranged in a regular pattern extending over the dielectric...
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| creator | AMINPUR, MASSUD ABUBAKER CONLEY, WILL WARRICK, SCOTT RIVIERE-CAZEAUX, LIONEL |
| description | A method of forming openings to a layer of a semiconductor device comprises forming a dielectric layer over the layer of the semiconductor device, and forming a mask over the dielectric layer. The mask comprises a plurality of mask openings arranged in a regular pattern extending over the dielectric layer and the plurality of mask openings include a plurality of first mask openings and a plurality of second mask openings, each of the plurality of first mask openings being greater in size than each of the plurality of second mask openings. The method further comprises reducing the size of the plurality of second mask openings such that each of the second mask openings is substantially closed and removing portions of the dielectric layer through the plurality of first mask openings to provide openings extending through the dielectric layer to the layer. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI467655BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI467655BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI467655BB3</originalsourceid><addsrcrecordid>eNrjZPD1dQ3x8HdR8HdTcPMP8vX0c1fwD3D1A9LBCp5-Co4Kwa6-ns7-fi6hziH-QQourmGezq4Kjn4uWCV4GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakl8SLiniZm5mampk5MxEUoAg7YuNA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF FORMING OPENINGS IN A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>AMINPUR, MASSUD ABUBAKER ; CONLEY, WILL ; WARRICK, SCOTT ; RIVIERE-CAZEAUX, LIONEL</creator><creatorcontrib>AMINPUR, MASSUD ABUBAKER ; CONLEY, WILL ; WARRICK, SCOTT ; RIVIERE-CAZEAUX, LIONEL</creatorcontrib><description>A method of forming openings to a layer of a semiconductor device comprises forming a dielectric layer over the layer of the semiconductor device, and forming a mask over the dielectric layer. The mask comprises a plurality of mask openings arranged in a regular pattern extending over the dielectric layer and the plurality of mask openings include a plurality of first mask openings and a plurality of second mask openings, each of the plurality of first mask openings being greater in size than each of the plurality of second mask openings. The method further comprises reducing the size of the plurality of second mask openings such that each of the second mask openings is substantially closed and removing portions of the dielectric layer through the plurality of first mask openings to provide openings extending through the dielectric layer to the layer.</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150101&DB=EPODOC&CC=TW&NR=I467655B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150101&DB=EPODOC&CC=TW&NR=I467655B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AMINPUR, MASSUD ABUBAKER</creatorcontrib><creatorcontrib>CONLEY, WILL</creatorcontrib><creatorcontrib>WARRICK, SCOTT</creatorcontrib><creatorcontrib>RIVIERE-CAZEAUX, LIONEL</creatorcontrib><title>METHOD OF FORMING OPENINGS IN A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE</title><description>A method of forming openings to a layer of a semiconductor device comprises forming a dielectric layer over the layer of the semiconductor device, and forming a mask over the dielectric layer. The mask comprises a plurality of mask openings arranged in a regular pattern extending over the dielectric layer and the plurality of mask openings include a plurality of first mask openings and a plurality of second mask openings, each of the plurality of first mask openings being greater in size than each of the plurality of second mask openings. The method further comprises reducing the size of the plurality of second mask openings such that each of the second mask openings is substantially closed and removing portions of the dielectric layer through the plurality of first mask openings to provide openings extending through the dielectric layer to the layer.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD1dQ3x8HdR8HdTcPMP8vX0c1fwD3D1A9LBCp5-Co4Kwa6-ns7-fi6hziH-QQourmGezq4Kjn4uWCV4GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakl8SLiniZm5mampk5MxEUoAg7YuNA</recordid><startdate>20150101</startdate><enddate>20150101</enddate><creator>AMINPUR, MASSUD ABUBAKER</creator><creator>CONLEY, WILL</creator><creator>WARRICK, SCOTT</creator><creator>RIVIERE-CAZEAUX, LIONEL</creator><scope>EVB</scope></search><sort><creationdate>20150101</creationdate><title>METHOD OF FORMING OPENINGS IN A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE</title><author>AMINPUR, MASSUD ABUBAKER ; CONLEY, WILL ; WARRICK, SCOTT ; RIVIERE-CAZEAUX, LIONEL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI467655BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2015</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>AMINPUR, MASSUD ABUBAKER</creatorcontrib><creatorcontrib>CONLEY, WILL</creatorcontrib><creatorcontrib>WARRICK, SCOTT</creatorcontrib><creatorcontrib>RIVIERE-CAZEAUX, LIONEL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AMINPUR, MASSUD ABUBAKER</au><au>CONLEY, WILL</au><au>WARRICK, SCOTT</au><au>RIVIERE-CAZEAUX, LIONEL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF FORMING OPENINGS IN A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE</title><date>2015-01-01</date><risdate>2015</risdate><abstract>A method of forming openings to a layer of a semiconductor device comprises forming a dielectric layer over the layer of the semiconductor device, and forming a mask over the dielectric layer. The mask comprises a plurality of mask openings arranged in a regular pattern extending over the dielectric layer and the plurality of mask openings include a plurality of first mask openings and a plurality of second mask openings, each of the plurality of first mask openings being greater in size than each of the plurality of second mask openings. The method further comprises reducing the size of the plurality of second mask openings such that each of the second mask openings is substantially closed and removing portions of the dielectric layer through the plurality of first mask openings to provide openings extending through the dielectric layer to the layer.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | METHOD OF FORMING OPENINGS IN A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
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