A first inter-layer dielectric stack for non-volatile memory

A method and apparatus are described for forming a first inter-layer dielectric (ILD0) stack having a protective gettering layer (72) with a substantially uniform thickness. After forming device components (32, 33) on a substrate (31), a gap fill dielectric layer of SATEOS (52) is deposited over an...

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Bibliographische Detailangaben

Hauptverfasser:	INGERSOLL, PAUL A, ADETUTU, OLUBUNMI O, SWIFT, CRAIG T, HUNDLEY, CHRISTOPHER B
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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