Method for forming semiconductor structure

A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YEH, CHENNAN, CHANG, CHENGHUNG, YU, CHENHUA, HUNG, SHIHTING, LEE, CHENYI, HSU, YURUNG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT THEREOF NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING
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