Memory cell structure and method of manufacturing the same, and mram cell structure

Disclosed herein is an improved memory device, and related methods of manufacturing, wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TSAI, CHIASHIUNG, LIAW, JHON JHY, WANG, YU JEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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