Split-gate flash memory devices and methods for forming the same

A split-gate flash memory device has a floating gate with a lateral recess at its bottom sidewall by adding an undercutting step. The split-gate flash memory device has a floating gate with a lateral recess on a substrate, an integrated dielectric layer lining the substrate, the sidewall and the lat...

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Hauptverfasser:	LIU, SHIHCHANG, TSAI, CHIASHIUNG, LO, CHI HSIN, HO, CHI WEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	LIU, SHIHCHANG TSAI, CHIASHIUNG LO, CHI HSIN HO, CHI WEI
description	A split-gate flash memory device has a floating gate with a lateral recess at its bottom sidewall by adding an undercutting step. The split-gate flash memory device has a floating gate with a lateral recess on a substrate, an integrated dielectric layer lining the substrate, the sidewall and the lateral recess of the floating gate; a control gate on the integrated dielectric layer and covering at least part of the floating gate; and a dielectric spacer in the lateral recess between the integrated dielectric layer and the control gate.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Split-gate flash memory devices and methods for forming the same
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