Atomic layer deposited tantalum containing adhesion layer

Atomic layer deposited tantalum containing adhesion layer

Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximi...

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Hauptverfasser: PETERSON, BRENNAN L, JOHNSTON, STEVEN W, SPURGIN, KERRY
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator PETERSON, BRENNAN L
JOHNSTON, STEVEN W
SPURGIN, KERRY
description Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Atomic layer deposited tantalum containing adhesion layer
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