Activated slurry CMP system and methods for implementing the same

A method for enhancing the material removal rate of an upper layer of a wafer in chemical mechanical planarization (CMP) systems is provided. The method includes applying radiation to an amount of slurry before the slurry is applied to the upper layer of the wafer. In one example, the method also in...

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Bibliographische Detailangaben
1. Verfasser:	GOTKIS, YEHIEL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A method for enhancing the material removal rate of an upper layer of a wafer in chemical mechanical planarization (CMP) systems is provided. The method includes applying radiation to an amount of slurry before the slurry is applied to the upper layer of the wafer. In one example, the method also includes providing a polishing pad and a carrier head configured to hold the wafer. The method further includes creating a mechanical polishing interface between the polishing pad, the upper layer of the wafer, and the radiation exposed slurry by bringing the polishing pad and the carrier head into contact.