Semiconductor devices having different gate dielectrics and methods for manufacturing the same

A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includ...

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Bibliographische Detailangaben

Hauptverfasser:	LEE, JONG-HO, KANG, HO-KYU, KIM, YUN-SEOK, JUNG, HYUNG-SUK, DOH, SEOK-JO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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