Semiconductor memory device using VSS or VDD bit line precharge approach without reference cell

Provided is a semiconductor memory device using a VSS or VDD bit line precharge approach without a reference cell. Two P-type sense amplifiers are used in the VSS precharge approach and two N-type sense amplifiers are used in the VDD precharge approach. In one of the two sense amplifiers, a transist...

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1. Verfasser:	NOH, KYONG-JUN
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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