Structure of Gallium-Nitride light-emitting diode

The present invention relates to a structure of Gallium-Nitride (GaN) light-emitting diode containing short-cycle, super-lattice digital contacting layer, which includes a substrate, a double buffer layer, an n-type GaN layer, a short-cycle, super-lattice digital contacting layer, an active light-emitting layer, a p-type cladding layer, and a contacting layer. The advantage of the disclosed structure lies in the manufacture of a thick n-type GaN contacting layer with highly doped concentration (n > 1x10 cm) and low resistance without simultaneously generating crack or pin hole in the thick n-type GaN contacting layer, thereby enabling to maintain the quality of heavily-doped GaN contacting layer. Secondly, by means of a short-period, heavily-doped silicon AlGaInN (n-Al1-x-yGaxInyN), a super lattice structure can be grown to the super-lattice digital contacting layer being a n-type contacting layer having a low resistance value in an InGaN/GaN multi-quantum well LED. The later steps facilitate the manufacture of n-type ohmic contact-electrolyte layer and lower the operational voltage of whole device due to better electric properties as a whole.