III-V nitride compound LED flip-chip structure having multiple layers of reflective film and manufacturing method thereof

The present invention provides a III-V nitride compound LED flip-chip structure having multiple layers of reflective film and manufacturing method thereof, in which plural alternative layers of reflective film made mainly of different dielectric materials are added onto the front surface of the LED...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG, CHIEN-JEN, WANG, WEI-JEN, CHANG, CHUAN-MING, CHANG, NAI-WEN, CHIANG, KUOUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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