III-V nitride compound LED flip-chip structure having multiple layers of reflective film and manufacturing method thereof

III-V nitride compound LED flip-chip structure having multiple layers of reflective film and manufacturing method thereof

The present invention provides a III-V nitride compound LED flip-chip structure having multiple layers of reflective film and manufacturing method thereof, in which plural alternative layers of reflective film made mainly of different dielectric materials are added onto the front surface of the LED...

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Hauptverfasser: WANG, CHIEN-JEN, WANG, WEI-JEN, CHANG, CHUAN-MING, CHANG, NAI-WEN, CHIANG, KUOUN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator WANG, CHIEN-JEN
WANG, WEI-JEN
CHANG, CHUAN-MING
CHANG, NAI-WEN
CHIANG, KUOUN
description The present invention provides a III-V nitride compound LED flip-chip structure having multiple layers of reflective film and manufacturing method thereof, in which plural alternative layers of reflective film made mainly of different dielectric materials are added onto the front surface of the LED and epitaxy structure for forming a reflective layer, which reflects the light originally emitting toward the front side into the back side (transparent substrate) direction, thereby forming the flip-chip structure for capturing light from the transparent substrate on the back surface, so that the efficiency of capturing light is increased.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title III-V nitride compound LED flip-chip structure having multiple layers of reflective film and manufacturing method thereof
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