Semiconductor device having trench top isolation layers and method for forming the same

A method for forming a semiconductor device having trench top isolation layers. A substrate has a trench therein and a collar oxide is formed over the sidewall of the lower trench. A first conductive layer is formed in the lower trench and protrudes the collar oxide, and then a second conductive lay...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN, YI-NAN, LIN, FENGUAN, WU, TIEHIANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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