Electric connection structure of semiconductor package substrate and method for fabricating the same
An electric connection structure of a semiconductor package substrate and a method for fabricating the same are proposed. A conductive layer is formed on an insulating layer of a substrate, and a first patterned resist layer is applied over the conductive layer and formed with first openings to expo...
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| creator | CHEN, CHIENIH WANG, SHING-RU SUN, TAI-FU HU, GIN-WIN |
| description | An electric connection structure of a semiconductor package substrate and a method for fabricating the same are proposed. A conductive layer is formed on an insulating layer of a substrate, and a first patterned resist layer is applied over the conductive layer and formed with first openings to expose the conductive layer. After a pattern circuit layer is formed within the first openings by an electroplating process, a second patterned resist layer is applied over the substrate formed with the circuit layer. And the second resist layer is formed with second openings to expose portions of the circuit layer which are used for pads, wherein the size of the second opening is bigger than the first opening over the pad. A first protective metal layer is formed on the pad within the first opening and a second protective metal layer is formed thereon by an electroplating process, wherein the second protective metal layer is formed like a cap structure for covering the upper and lateral side of the first protective metal layer. |
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A conductive layer is formed on an insulating layer of a substrate, and a first patterned resist layer is applied over the conductive layer and formed with first openings to expose the conductive layer. After a pattern circuit layer is formed within the first openings by an electroplating process, a second patterned resist layer is applied over the substrate formed with the circuit layer. And the second resist layer is formed with second openings to expose portions of the circuit layer which are used for pads, wherein the size of the second opening is bigger than the first opening over the pad. A first protective metal layer is formed on the pad within the first opening and a second protective metal layer is formed thereon by an electroplating process, wherein the second protective metal layer is formed like a cap structure for covering the upper and lateral side of the first protective metal layer.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041101&DB=EPODOC&CC=TW&NR=I223426B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041101&DB=EPODOC&CC=TW&NR=I223426B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN, CHIENIH</creatorcontrib><creatorcontrib>WANG, SHING-RU</creatorcontrib><creatorcontrib>SUN, TAI-FU</creatorcontrib><creatorcontrib>HU, GIN-WIN</creatorcontrib><title>Electric connection structure of semiconductor package substrate and method for fabricating the same</title><description>An electric connection structure of a semiconductor package substrate and a method for fabricating the same are proposed. A conductive layer is formed on an insulating layer of a substrate, and a first patterned resist layer is applied over the conductive layer and formed with first openings to expose the conductive layer. After a pattern circuit layer is formed within the first openings by an electroplating process, a second patterned resist layer is applied over the substrate formed with the circuit layer. And the second resist layer is formed with second openings to expose portions of the circuit layer which are used for pads, wherein the size of the second opening is bigger than the first opening over the pad. 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A conductive layer is formed on an insulating layer of a substrate, and a first patterned resist layer is applied over the conductive layer and formed with first openings to expose the conductive layer. After a pattern circuit layer is formed within the first openings by an electroplating process, a second patterned resist layer is applied over the substrate formed with the circuit layer. And the second resist layer is formed with second openings to expose portions of the circuit layer which are used for pads, wherein the size of the second opening is bigger than the first opening over the pad. A first protective metal layer is formed on the pad within the first opening and a second protective metal layer is formed thereon by an electroplating process, wherein the second protective metal layer is formed like a cap structure for covering the upper and lateral side of the first protective metal layer.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Electric connection structure of semiconductor package substrate and method for fabricating the same |
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