High dielectric constant gate oxides for silicon-based devices

A high dielectric rare earth oxide of the form Mn2O3 (such as, for example, Gd2O3 or Y2O3) is grown on a clean silicon (100) substrate surface under an oxygen partial pressure less than or equal to 10 torr to form an acceptable gate oxide (in terms of dielectric constant (epsilon 18) and thickness)...

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Hauptverfasser:	KORTAN, AHMET REFIK, KWO, JUEINAI RAYNIEN, MANNAERTS, JOSEPH PETRUS, HONG, MINGHWEI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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creator	KORTAN, AHMET REFIK KWO, JUEINAI RAYNIEN MANNAERTS, JOSEPH PETRUS HONG, MINGHWEI
description	A high dielectric rare earth oxide of the form Mn2O3 (such as, for example, Gd2O3 or Y2O3) is grown on a clean silicon (100) substrate surface under an oxygen partial pressure less than or equal to 10 torr to form an acceptable gate oxide (in terms of dielectric constant (epsilon 18) and thickness) that eliminates the tunneling current present in ultra-thin conventional SiO2 dielectrics and avoids the formation of a native oxide layer at the interface between the silicon substrate and the dielectric. Epitaxial films can be grown on vicinal silicon substrates and amorphous films on regular silicon substrates to form the high dielectric gate oxide.
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subjects	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title	High dielectric constant gate oxides for silicon-based devices
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