Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
An enhancement mode semiconductor device has a barrier layer disposed between the gate electrode of the device and the semiconductor substrate underlying the gate electrode. The barrier layer increases the Schottky barrier height of the gate electrode-barrier layer-substrate interface so that the po...
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| creator | COSTA, JULIO MARTINEZ, MARINO J SCHIRMANN, ERNEST CODY, NYLES W |
| description | An enhancement mode semiconductor device has a barrier layer disposed between the gate electrode of the device and the semiconductor substrate underlying the gate electrode. The barrier layer increases the Schottky barrier height of the gate electrode-barrier layer-substrate interface so that the portion of the substrate underlying the gate electrode operates in an enhancement mode. The barrier layer is particularly useful in compound semiconductor field effect transistors, and preferred materials for the barrier layer include aluminum gallium arsenide and indium gallium arsenide. |
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The barrier layer increases the Schottky barrier height of the gate electrode-barrier layer-substrate interface so that the portion of the substrate underlying the gate electrode operates in an enhancement mode. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor |
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