Semiconductor memory device
The semiconductor memory device capable of performing a repair using only the fuses for programming a defective address is provided. The semiconductor memory device is provided with at least two replacement programming circuits. Each replacement programming circuit includes a programming circuit for...
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creator | MANO, RYUJI |
description | The semiconductor memory device capable of performing a repair using only the fuses for programming a defective address is provided. The semiconductor memory device is provided with at least two replacement programming circuits. Each replacement programming circuit includes a programming circuit for programming a defective address. An output of each replacement programming circuit is used as a signal for indicating whether to perform or not to perform a replacement. A word line that cannot be repaired by one replacement programming circuit is repaired using an output from another replacement programming circuit. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW521275BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW521275BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW521275BB3</originalsourceid><addsrcrecordid>eNrjZJAOTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE7lYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxIeGmRoZG5qZOTsaEVQAAFDsjLA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor memory device</title><source>esp@cenet</source><creator>MANO, RYUJI</creator><creatorcontrib>MANO, RYUJI</creatorcontrib><description>The semiconductor memory device capable of performing a repair using only the fuses for programming a defective address is provided. The semiconductor memory device is provided with at least two replacement programming circuits. Each replacement programming circuit includes a programming circuit for programming a defective address. An output of each replacement programming circuit is used as a signal for indicating whether to perform or not to perform a replacement. A word line that cannot be repaired by one replacement programming circuit is repaired using an output from another replacement programming circuit.</description><edition>7</edition><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030221&DB=EPODOC&CC=TW&NR=521275B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030221&DB=EPODOC&CC=TW&NR=521275B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MANO, RYUJI</creatorcontrib><title>Semiconductor memory device</title><description>The semiconductor memory device capable of performing a repair using only the fuses for programming a defective address is provided. The semiconductor memory device is provided with at least two replacement programming circuits. Each replacement programming circuit includes a programming circuit for programming a defective address. An output of each replacement programming circuit is used as a signal for indicating whether to perform or not to perform a replacement. A word line that cannot be repaired by one replacement programming circuit is repaired using an output from another replacement programming circuit.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAOTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE7lYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxIeGmRoZG5qZOTsaEVQAAFDsjLA</recordid><startdate>20030221</startdate><enddate>20030221</enddate><creator>MANO, RYUJI</creator><scope>EVB</scope></search><sort><creationdate>20030221</creationdate><title>Semiconductor memory device</title><author>MANO, RYUJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW521275BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>MANO, RYUJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MANO, RYUJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor memory device</title><date>2003-02-21</date><risdate>2003</risdate><abstract>The semiconductor memory device capable of performing a repair using only the fuses for programming a defective address is provided. The semiconductor memory device is provided with at least two replacement programming circuits. Each replacement programming circuit includes a programming circuit for programming a defective address. An output of each replacement programming circuit is used as a signal for indicating whether to perform or not to perform a replacement. A word line that cannot be repaired by one replacement programming circuit is repaired using an output from another replacement programming circuit.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | Semiconductor memory device |
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