Method and apparatus for controlling operation of a substrate processing chamber
A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadban...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | DAVIDOW, JED E LYMBEROPOLOUS, DIMITRIS P BALASUBRAMHANYA, LALITHA S SARFATY, MOSHE |
| description | A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadband light source. During the plasma etch process, a plurality of wavelengths of radiation reflected from the surface of the wafer being etched are measured with a spectrometer. These measurements are then compared using pattern recognition techniques to previous measurements taken during a previous plasma etch operation. Certain embodiments of the invention use principal component analysis (PCA) techniques to perform pattern recognition while other embodiment use programmed neural net pattern recognition techniques. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW516075BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW516075BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW516075BB3</originalsourceid><addsrcrecordid>eNqFijEKwkAQRbexEPUMzgUERaJ9JGIjWAQsw2SdNYHNzjCzub8r2Fs8Prz_lu5xpzzwCzAVRFAxzwaBFTynrBzjmN7AQuUYOQEHQLC5t1wEgSh7Mvs2fsCpJ127RcBotPntym2vTXu57Ui4IxP0lCh37bM6nPbnqq6P_4sP-qo3Rw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus for controlling operation of a substrate processing chamber</title><source>esp@cenet</source><creator>DAVIDOW, JED E ; LYMBEROPOLOUS, DIMITRIS P ; BALASUBRAMHANYA, LALITHA S ; SARFATY, MOSHE</creator><creatorcontrib>DAVIDOW, JED E ; LYMBEROPOLOUS, DIMITRIS P ; BALASUBRAMHANYA, LALITHA S ; SARFATY, MOSHE</creatorcontrib><description>A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadband light source. During the plasma etch process, a plurality of wavelengths of radiation reflected from the surface of the wafer being etched are measured with a spectrometer. These measurements are then compared using pattern recognition techniques to previous measurements taken during a previous plasma etch operation. Certain embodiments of the invention use principal component analysis (PCA) techniques to perform pattern recognition while other embodiment use programmed neural net pattern recognition techniques.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030101&DB=EPODOC&CC=TW&NR=516075B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030101&DB=EPODOC&CC=TW&NR=516075B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAVIDOW, JED E</creatorcontrib><creatorcontrib>LYMBEROPOLOUS, DIMITRIS P</creatorcontrib><creatorcontrib>BALASUBRAMHANYA, LALITHA S</creatorcontrib><creatorcontrib>SARFATY, MOSHE</creatorcontrib><title>Method and apparatus for controlling operation of a substrate processing chamber</title><description>A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadband light source. During the plasma etch process, a plurality of wavelengths of radiation reflected from the surface of the wafer being etched are measured with a spectrometer. These measurements are then compared using pattern recognition techniques to previous measurements taken during a previous plasma etch operation. Certain embodiments of the invention use principal component analysis (PCA) techniques to perform pattern recognition while other embodiment use programmed neural net pattern recognition techniques.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFijEKwkAQRbexEPUMzgUERaJ9JGIjWAQsw2SdNYHNzjCzub8r2Fs8Prz_lu5xpzzwCzAVRFAxzwaBFTynrBzjmN7AQuUYOQEHQLC5t1wEgSh7Mvs2fsCpJ127RcBotPntym2vTXu57Ui4IxP0lCh37bM6nPbnqq6P_4sP-qo3Rw</recordid><startdate>20030101</startdate><enddate>20030101</enddate><creator>DAVIDOW, JED E</creator><creator>LYMBEROPOLOUS, DIMITRIS P</creator><creator>BALASUBRAMHANYA, LALITHA S</creator><creator>SARFATY, MOSHE</creator><scope>EVB</scope></search><sort><creationdate>20030101</creationdate><title>Method and apparatus for controlling operation of a substrate processing chamber</title><author>DAVIDOW, JED E ; LYMBEROPOLOUS, DIMITRIS P ; BALASUBRAMHANYA, LALITHA S ; SARFATY, MOSHE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW516075BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>DAVIDOW, JED E</creatorcontrib><creatorcontrib>LYMBEROPOLOUS, DIMITRIS P</creatorcontrib><creatorcontrib>BALASUBRAMHANYA, LALITHA S</creatorcontrib><creatorcontrib>SARFATY, MOSHE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAVIDOW, JED E</au><au>LYMBEROPOLOUS, DIMITRIS P</au><au>BALASUBRAMHANYA, LALITHA S</au><au>SARFATY, MOSHE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for controlling operation of a substrate processing chamber</title><date>2003-01-01</date><risdate>2003</risdate><abstract>A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadband light source. During the plasma etch process, a plurality of wavelengths of radiation reflected from the surface of the wafer being etched are measured with a spectrometer. These measurements are then compared using pattern recognition techniques to previous measurements taken during a previous plasma etch operation. Certain embodiments of the invention use principal component analysis (PCA) techniques to perform pattern recognition while other embodiment use programmed neural net pattern recognition techniques.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_TW516075BB |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method and apparatus for controlling operation of a substrate processing chamber |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T14%3A21%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DAVIDOW,%20JED%20E&rft.date=2003-01-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW516075BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |