Apparatus for reducing particle residues in a semiconductor processing chamber
An apparatus for reducing particle residues in a semiconductor wafer processing system comprising a chamber and a chamber slot extending through a sidewall of the chamber. A processing platform having at least one sidewall is coupled to the chamber and a wafer channel extends through the chamber sid...
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| creator | GUJER, RUDOLF CHO, THOMAS K ISHIKAWA, TETSUYA KARAZIM, MICHAEL P |
| description | An apparatus for reducing particle residues in a semiconductor wafer processing system comprising a chamber and a chamber slot extending through a sidewall of the chamber. A processing platform having at least one sidewall is coupled to the chamber and a wafer channel extends through the chamber sidewall and the at least one processing platform sidewall such that the wafer channel intersects the chamber slot. A chamber slit valve extends through the chamber slot to control particle residues in the wafer channel. |
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A processing platform having at least one sidewall is coupled to the chamber and a wafer channel extends through the chamber sidewall and the at least one processing platform sidewall such that the wafer channel intersects the chamber slot. A chamber slit valve extends through the chamber slot to control particle residues in the wafer channel.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021121&DB=EPODOC&CC=TW&NR=511126B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021121&DB=EPODOC&CC=TW&NR=511126B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GUJER, RUDOLF</creatorcontrib><creatorcontrib>CHO, THOMAS K</creatorcontrib><creatorcontrib>ISHIKAWA, TETSUYA</creatorcontrib><creatorcontrib>KARAZIM, MICHAEL P</creatorcontrib><title>Apparatus for reducing particle residues in a semiconductor processing chamber</title><description>An apparatus for reducing particle residues in a semiconductor wafer processing system comprising a chamber and a chamber slot extending through a sidewall of the chamber. A processing platform having at least one sidewall is coupled to the chamber and a wafer channel extends through the chamber sidewall and the at least one processing platform sidewall such that the wafer channel intersects the chamber slot. 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A processing platform having at least one sidewall is coupled to the chamber and a wafer channel extends through the chamber sidewall and the at least one processing platform sidewall such that the wafer channel intersects the chamber slot. A chamber slit valve extends through the chamber slot to control particle residues in the wafer channel.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Apparatus for reducing particle residues in a semiconductor processing chamber |
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