Method of manufacturing a semiconductor device

There is disclosed a method of manufacturing a semiconductor device capable of preventing two electrodes from being short. The method comprises the step of forming a gate pattern in which a spacer is formed on a given region of a semiconductor substrate; forming a junction region on the semiconductor substrate by impurity ion injection process; forming a first insulating film on the entire structure, and then polishing the first insulating film until the upper portion of the gate pattern is exposed, to flatten it; removing the gate pattern to expose the semiconductor substrate, and then forming a gate oxide film on the exposed semiconductor substrate; etching a given region of the first insulating film to form a contact hole exposing the junction region; forming a barrier layer and a buffer layer on the entire structure; forming a conductive layer on the entire structure so that the portion in which a contact hole and a gate will be formed can be buried, and then polishing the conductive layer to form a gate electrode and a bit line and a plug of a charge storing electrode; and forming a second insulating film on the entire structure.