Low k dielectric materials with inherent copper ion migration barrier

An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	COHEN, STEPHAN ALAN, FEGER, CLAUDIUS, HEDRICK, JEFFREY CURTIS, SHAW, JANE MARGARET
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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