Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor

Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor

A method for enhancing the removal rate of a metal barrier layer during CMP includes providing a semiconductor wafer having an insulator layer, a metal barrier layer formed on at least a portion of the insulation layer and a conductive layer formed thereon and contacting the semiconductor wafer with...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SCHUTZ, RONALD JOSEPH
Format: Patent
Sprache:eng
Schlagworte:
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for enhancing the removal rate of a metal barrier layer during CMP includes providing a semiconductor wafer having an insulator layer, a metal barrier layer formed on at least a portion of the insulation layer and a conductive layer formed thereon and contacting the semiconductor wafer with a chemical-mechanical polishing slurry containing a metal removal-enhancing amount of at least one chelating agent.