High voltage integrated switching devices on a bonded and trenched silicon substrate

High voltage integrated switching devices on a bonded and trenched silicon substrate

A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage...

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Hauptverfasser: JONES, SCOTTEN W, POLCE, NESTORE A, HEISIG, MARK F
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator JONES, SCOTTEN W
POLCE, NESTORE A
HEISIG, MARK F
description A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage switching circuits may be located in close proximity on a single substrate without circuit breakdown or shorting during circuit operation. The circuit may further include one or more low- and/or intermediate-voltage circuits employing, for example, CMOS and bipolar technologies on the same silicon substrate and located in close proximity without voltage breakdown during circuit operation.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW457721BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW457721BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW457721BB3</originalsourceid><addsrcrecordid>eNqFizsOwjAMQLMwIOAM-AIM_NS9CNQDRGKs3MSkliKnqk25Pq3EzvSG997a-YZTD1PJhomAxSiNaBRBP2yhZ0kQaeJACkUAoSsSZ4sSwUaS0C8pZw6z1Xenttxbt3phVtr9uHH7x93fmgMNpSUdMJCQtf55uVbV6VjX5__FF8kPOGk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>High voltage integrated switching devices on a bonded and trenched silicon substrate</title><source>esp@cenet</source><creator>JONES, SCOTTEN W ; POLCE, NESTORE A ; HEISIG, MARK F</creator><creatorcontrib>JONES, SCOTTEN W ; POLCE, NESTORE A ; HEISIG, MARK F</creatorcontrib><description>A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage switching circuits may be located in close proximity on a single substrate without circuit breakdown or shorting during circuit operation. The circuit may further include one or more low- and/or intermediate-voltage circuits employing, for example, CMOS and bipolar technologies on the same silicon substrate and located in close proximity without voltage breakdown during circuit operation.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20011001&amp;DB=EPODOC&amp;CC=TW&amp;NR=457721B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20011001&amp;DB=EPODOC&amp;CC=TW&amp;NR=457721B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JONES, SCOTTEN W</creatorcontrib><creatorcontrib>POLCE, NESTORE A</creatorcontrib><creatorcontrib>HEISIG, MARK F</creatorcontrib><title>High voltage integrated switching devices on a bonded and trenched silicon substrate</title><description>A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage switching circuits may be located in close proximity on a single substrate without circuit breakdown or shorting during circuit operation. The circuit may further include one or more low- and/or intermediate-voltage circuits employing, for example, CMOS and bipolar technologies on the same silicon substrate and located in close proximity without voltage breakdown during circuit operation.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFizsOwjAMQLMwIOAM-AIM_NS9CNQDRGKs3MSkliKnqk25Pq3EzvSG997a-YZTD1PJhomAxSiNaBRBP2yhZ0kQaeJACkUAoSsSZ4sSwUaS0C8pZw6z1Xenttxbt3phVtr9uHH7x93fmgMNpSUdMJCQtf55uVbV6VjX5__FF8kPOGk</recordid><startdate>20011001</startdate><enddate>20011001</enddate><creator>JONES, SCOTTEN W</creator><creator>POLCE, NESTORE A</creator><creator>HEISIG, MARK F</creator><scope>EVB</scope></search><sort><creationdate>20011001</creationdate><title>High voltage integrated switching devices on a bonded and trenched silicon substrate</title><author>JONES, SCOTTEN W ; POLCE, NESTORE A ; HEISIG, MARK F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW457721BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2001</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JONES, SCOTTEN W</creatorcontrib><creatorcontrib>POLCE, NESTORE A</creatorcontrib><creatorcontrib>HEISIG, MARK F</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JONES, SCOTTEN W</au><au>POLCE, NESTORE A</au><au>HEISIG, MARK F</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High voltage integrated switching devices on a bonded and trenched silicon substrate</title><date>2001-10-01</date><risdate>2001</risdate><abstract>A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage switching circuits may be located in close proximity on a single substrate without circuit breakdown or shorting during circuit operation. The circuit may further include one or more low- and/or intermediate-voltage circuits employing, for example, CMOS and bipolar technologies on the same silicon substrate and located in close proximity without voltage breakdown during circuit operation.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title High voltage integrated switching devices on a bonded and trenched silicon substrate
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T18%3A54%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JONES,%20SCOTTEN%20W&rft.date=2001-10-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW457721BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true