DRAM having COB structure and its fabrication method

A DRAM having a COB structure according to the invention including a semiconductor substrate formed with a diffusion layer, a word line formed on the semiconductor substrate, an interlayer insulating film formed on the word line, a capacitor contact formed at the interlayer insulating film and conne...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KAWAZOE, TAKAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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