SRAM-cells arrangement and its production method

The SRAM-cells arrangement includes at least six transistors per memory-cell. Four of the transistors form a Flip-Flop and are arranged at the corners of a square. The Flip-Flop is controlled by two of the transistors, these two transistors are arranged adjacently on the opposite corners of a diagon...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	RISCH, LOTHAR, ROESNER, WOLFGANG, AEUGLE, THOMAS, SCHULZ, THOMAS
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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