Methods of forming nonvolatile memory devices using improved masking techniques

Methods of forming nonvolatile memory devices include the steps of forming a plurality of field oxide isolation regions on a semiconductor substrate. A thermal oxidation step may then be performed to define first gate insulating layers on active regions within the substrate. A blanket layer of polys...

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1. Verfasser:	JEONG, JAE-IK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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