Composite dielectric layer, mosfet transistor containing the same and method of forming the same

A composite dielectric layer (102). A first layer (112) of the composite dielectric layer (102) has a small to no nitrogen concentration. A second layer (114) of the composite dielectric layer (102) has a larger nitrogen concentration (e.g., 5-15%). The composite dielectric layer (102) may be used a...

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Bibliographische Detailangaben

Hauptverfasser:	HSIA, STEVE, TICKNOR GRIDER, DOUGLAS III, NICOLLIAN, PAUL EDWARD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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