NVRAM cell using sharp tip for tunnel erase

A non-volatile random access memory (NVRAM) cell and methods of forming thereof are disclosed. The NVRAM cell includes a substrate having source and drain regions. A spike having a sharp tip extends in the source region. Instead of a single spike, two adjacent spikes are included in the source. Alte...

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Bibliographische Detailangaben

Hauptverfasser:	NAKOS, JAMES S, BRACCHITTA, JOHN A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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