Method for using a hardmask to form an opening in a semiconductor substrate

The present invention provides a method of forming a opening in a semiconductor dielectric layer. In an advantageous embodiment, the method comprises the steps of forming a hardmask layer on the dielectric layer wherein the hardmask layer has an etch rate less than an etch rate of the dielectric lay...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOOK, TAEHO, STEINER, KURT GEORGE, YANG, TUNGSHENG, MAURY, ALVARO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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