Semiconductor cleaning using plasma-free precursors
Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material o...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | DEEPAK, NITIN KADAM, ANKUR THAKARE, DARSHAN RENGARAJAN, SURAJ PADHI, DEENESH SATYA, SRINIVAS M RAMACHANDRAN, GOPI CHANDRAN MOGHADAM, FARHAD K MANDAL, ABHISHEK BAJAJ, GEETIKA HEMKAR, MANISH TRIPATHI, VIJAY |
| description | Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202436674A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202436674A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202436674A3</originalsourceid><addsrcrecordid>eNrjZDAOTs3NTM7PSylNLskvUkjOSU3My8xLVygtBpEFOYnFuYm6aUWpqQoFRanJpUXF-UXFPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7UkPiTcyMDIxNjMzNzE0ZgYNQBHoi09</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor cleaning using plasma-free precursors</title><source>esp@cenet</source><creator>DEEPAK, NITIN ; KADAM, ANKUR ; THAKARE, DARSHAN ; RENGARAJAN, SURAJ ; PADHI, DEENESH ; SATYA, SRINIVAS M ; RAMACHANDRAN, GOPI CHANDRAN ; MOGHADAM, FARHAD K ; MANDAL, ABHISHEK ; BAJAJ, GEETIKA ; HEMKAR, MANISH ; TRIPATHI, VIJAY</creator><creatorcontrib>DEEPAK, NITIN ; KADAM, ANKUR ; THAKARE, DARSHAN ; RENGARAJAN, SURAJ ; PADHI, DEENESH ; SATYA, SRINIVAS M ; RAMACHANDRAN, GOPI CHANDRAN ; MOGHADAM, FARHAD K ; MANDAL, ABHISHEK ; BAJAJ, GEETIKA ; HEMKAR, MANISH ; TRIPATHI, VIJAY</creatorcontrib><description>Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240916&DB=EPODOC&CC=TW&NR=202436674A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240916&DB=EPODOC&CC=TW&NR=202436674A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DEEPAK, NITIN</creatorcontrib><creatorcontrib>KADAM, ANKUR</creatorcontrib><creatorcontrib>THAKARE, DARSHAN</creatorcontrib><creatorcontrib>RENGARAJAN, SURAJ</creatorcontrib><creatorcontrib>PADHI, DEENESH</creatorcontrib><creatorcontrib>SATYA, SRINIVAS M</creatorcontrib><creatorcontrib>RAMACHANDRAN, GOPI CHANDRAN</creatorcontrib><creatorcontrib>MOGHADAM, FARHAD K</creatorcontrib><creatorcontrib>MANDAL, ABHISHEK</creatorcontrib><creatorcontrib>BAJAJ, GEETIKA</creatorcontrib><creatorcontrib>HEMKAR, MANISH</creatorcontrib><creatorcontrib>TRIPATHI, VIJAY</creatorcontrib><title>Semiconductor cleaning using plasma-free precursors</title><description>Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAOTs3NTM7PSylNLskvUkjOSU3My8xLVygtBpEFOYnFuYm6aUWpqQoFRanJpUXF-UXFPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7UkPiTcyMDIxNjMzNzE0ZgYNQBHoi09</recordid><startdate>20240916</startdate><enddate>20240916</enddate><creator>DEEPAK, NITIN</creator><creator>KADAM, ANKUR</creator><creator>THAKARE, DARSHAN</creator><creator>RENGARAJAN, SURAJ</creator><creator>PADHI, DEENESH</creator><creator>SATYA, SRINIVAS M</creator><creator>RAMACHANDRAN, GOPI CHANDRAN</creator><creator>MOGHADAM, FARHAD K</creator><creator>MANDAL, ABHISHEK</creator><creator>BAJAJ, GEETIKA</creator><creator>HEMKAR, MANISH</creator><creator>TRIPATHI, VIJAY</creator><scope>EVB</scope></search><sort><creationdate>20240916</creationdate><title>Semiconductor cleaning using plasma-free precursors</title><author>DEEPAK, NITIN ; KADAM, ANKUR ; THAKARE, DARSHAN ; RENGARAJAN, SURAJ ; PADHI, DEENESH ; SATYA, SRINIVAS M ; RAMACHANDRAN, GOPI CHANDRAN ; MOGHADAM, FARHAD K ; MANDAL, ABHISHEK ; BAJAJ, GEETIKA ; HEMKAR, MANISH ; TRIPATHI, VIJAY</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202436674A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>DEEPAK, NITIN</creatorcontrib><creatorcontrib>KADAM, ANKUR</creatorcontrib><creatorcontrib>THAKARE, DARSHAN</creatorcontrib><creatorcontrib>RENGARAJAN, SURAJ</creatorcontrib><creatorcontrib>PADHI, DEENESH</creatorcontrib><creatorcontrib>SATYA, SRINIVAS M</creatorcontrib><creatorcontrib>RAMACHANDRAN, GOPI CHANDRAN</creatorcontrib><creatorcontrib>MOGHADAM, FARHAD K</creatorcontrib><creatorcontrib>MANDAL, ABHISHEK</creatorcontrib><creatorcontrib>BAJAJ, GEETIKA</creatorcontrib><creatorcontrib>HEMKAR, MANISH</creatorcontrib><creatorcontrib>TRIPATHI, VIJAY</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DEEPAK, NITIN</au><au>KADAM, ANKUR</au><au>THAKARE, DARSHAN</au><au>RENGARAJAN, SURAJ</au><au>PADHI, DEENESH</au><au>SATYA, SRINIVAS M</au><au>RAMACHANDRAN, GOPI CHANDRAN</au><au>MOGHADAM, FARHAD K</au><au>MANDAL, ABHISHEK</au><au>BAJAJ, GEETIKA</au><au>HEMKAR, MANISH</au><au>TRIPATHI, VIJAY</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor cleaning using plasma-free precursors</title><date>2024-09-16</date><risdate>2024</risdate><abstract>Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_TW202436674A |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Semiconductor cleaning using plasma-free precursors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T03%3A35%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DEEPAK,%20NITIN&rft.date=2024-09-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202436674A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |