3D-stacked field-effect transistor device, semiconductor device and method manufacturing thereof

Provided is a semiconductor device including a 3DSFET device which includes: a 1st source/drain region; a 2ndsource/drain region, above the 1st source/drain region, having a smaller width than the 1st source/drain region, the 2nd source/drain region being isolated from the 1st source/drain region by...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JUNG, MYUNG-HOON, YUN, SEUNGAN, PARK, PAN-JAE, YANG, MYUNG, SEO, KANG-ILL, BAEK, JAE-JIK
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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