Method of manufacturing semiconductor device

Reliability of a semiconductor device is improved. A field plate electrode is formed on an insulating film inside a trench. Next, by an isotropic etching process to the insulating film, the insulating film is thinned, and an upper portion of the field plate electrode is exposed from the insulating f...

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Bibliographische Detailangaben
1. Verfasser: ABIKO, YUYA
Format: Patent
Sprache:chi ; eng
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