Deposition of metal-containing films
Provided are methods for depositing a metal-containing film by in situ generation of an iodine-bond containing metal species with an iodine-containing reagent and a metal-containing precursor followed by reduction at a process temperature below 400 DEG C. In particular, the film can be a molybdenum-...
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| creator | BLAKENEY, KYLE JORDAN NA, JEONG-SEOK SMITH, JOEL DAVID HAUSMANN, DENNIS M MANDIA, DAVID JOSEPH FOX, ALEXANDER RAY RICHEY, NATHANIEL ELBA GRIFFITHS, MATTHEW BERTRAM EDWARD LAI, CHIUKIN STEVEN KANAKASABAPATHY, SIVANANDA KRISHNAN AGNEW, DOUGLAS WALTER |
| description | Provided are methods for depositing a metal-containing film by in situ generation of an iodine-bond containing metal species with an iodine-containing reagent and a metal-containing precursor followed by reduction at a process temperature below 400 DEG C. In particular, the film can be a molybdenum-containing film. The methods may also include simultaneous introduction of the reagent and the precursor or an optional pretreatment with a passivation gas. Also provided are methods for depositing molybdenum-containing films on semiconductor using low valent molybdenum-containing precursors. The low valent molybdenum precursors of one or two molybdenum atoms may have at least one ligand which is an isocyanohaloalkyl, an allyl, an aryl, a tertiary organophosphino or an alkoxide group. |
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In particular, the film can be a molybdenum-containing film. The methods may also include simultaneous introduction of the reagent and the precursor or an optional pretreatment with a passivation gas. Also provided are methods for depositing molybdenum-containing films on semiconductor using low valent molybdenum-containing precursors. 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In particular, the film can be a molybdenum-containing film. The methods may also include simultaneous introduction of the reagent and the precursor or an optional pretreatment with a passivation gas. Also provided are methods for depositing molybdenum-containing films on semiconductor using low valent molybdenum-containing precursors. 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In particular, the film can be a molybdenum-containing film. The methods may also include simultaneous introduction of the reagent and the precursor or an optional pretreatment with a passivation gas. Also provided are methods for depositing molybdenum-containing films on semiconductor using low valent molybdenum-containing precursors. The low valent molybdenum precursors of one or two molybdenum atoms may have at least one ligand which is an isocyanohaloalkyl, an allyl, an aryl, a tertiary organophosphino or an alkoxide group.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Deposition of metal-containing films |
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