Integrated Circuit semiconductor device

An Integrated Circuit (IC) semiconductor device includes: field insulating layers buried in field trenches disposed apart from each other inside a substrate; active regions defined by the field insulating layers; and active fins disposed on the active regions and protruding from surfaces of the fiel...

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Hauptverfasser: CHAE, HEE-JAE, PARK, TAE-JIN, KIM, BONG-SOO, KIM, HUI-JUNG, PARK, CHUL-KWON, YOON, GYUNG-HYUN, KIM, KYU-JIN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:An Integrated Circuit (IC) semiconductor device includes: field insulating layers buried in field trenches disposed apart from each other inside a substrate; active regions defined by the field insulating layers; and active fins disposed on the active regions and protruding from surfaces of the field insulating layers. The field insulating layers include a first subfield insulating layer and a second subfield insulating layer, and a surface of the first subfield insulating layer is disposed at a level lower than a level of a surface of the second subfield insulating layer.