High aspect ratio carbon etch with simulated BOSCH process

Various embodiments herein relate to methods and apparatus for etching a substrate. The substrate is typically a semiconductor substrate. In various implementations, the method involves receiving the substrate in a process chamber, the substrate including a carbon layer and a mask layer positioned o...

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Bibliographische Detailangaben
Hauptverfasser: TAN, ZHONG-KUI, KAMARTHY, GOWRI CHANNA, SUBRAMANIAN, PRIYADARSINI, SU, XIAO-FENG, LI, JING
Format: Patent
Sprache:chi ; eng
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