Method of producing a silicon layer system having electrical connections

Method of producing a silicon layer system (310), having the steps of: providing a carrier substrate having a surface, where the carrier substrate has been provided with an insulation layer formed on the surface, applying a first silicon layer to the insulation layer, structuring the first silicon layer to form trenches in the silicon layer, where the trenches extend through the silicon layer at least in places, passivating the first silicon layer, wherein the trenches are filled and a first passivation layer is formed on a side of the first silicon layer remote from the insulation layer, and structuring the passivation layer, wherein first sacrificial regions and functional regions are formed in the first silicon layer, and the sacrificial regions on the side of the first silicon layer remote from the insulation layer are free of the passivation layer at least in places. The steps from the applying onward are repeated, which gives rise to sacrificial regions and functional regions in further silicon layers,