Susceptor with interchangeable supporting elements and uses of the same
Susceptor for an apparatus for depositing a layer of semiconductor material on a substrate wafer (40), wherein the susceptor comprises a susceptor plate and at least one substrate holder (5) for a substrate wafer (40) on the susceptor plate, the at least one substrate holder (5) has a discoid lower...
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| creator | VORDERWESTNER, MARTIN MOOS, PATRICK |
| description | Susceptor for an apparatus for depositing a layer of semiconductor material on a substrate wafer (40), wherein the susceptor comprises a susceptor plate and at least one substrate holder (5) for a substrate wafer (40) on the susceptor plate, the at least one substrate holder (5) has a discoid lower part (10), a substrate carrier ring (20), and supporting elements (30), and the supporting elements (30) are arranged concentrically around the ring centre point of the substrate carrier ring (20), characterized in that the substrate carrier ring (20) has insertion openings and the supporting elements (30) have insertion portions, the insertion portions are arranged interchangeably in at least a part of the insertion openings, and the supporting elements have a radial width of 5 mm or less; apparatus for depositing a layer of semiconductor material on a substrate wafer (40); and a method for depositing an epitaxial layer. |
| format | Patent |
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apparatus for depositing a layer of semiconductor material on a substrate wafer (40); and a method for depositing an epitaxial layer.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240501&DB=EPODOC&CC=TW&NR=202418467A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76304</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240501&DB=EPODOC&CC=TW&NR=202418467A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VORDERWESTNER, MARTIN</creatorcontrib><creatorcontrib>MOOS, PATRICK</creatorcontrib><title>Susceptor with interchangeable supporting elements and uses of the same</title><description>Susceptor for an apparatus for depositing a layer of semiconductor material on a substrate wafer (40), wherein the susceptor comprises a susceptor plate and at least one substrate holder (5) for a substrate wafer (40) on the susceptor plate, the at least one substrate holder (5) has a discoid lower part (10), a substrate carrier ring (20), and supporting elements (30), and the supporting elements (30) are arranged concentrically around the ring centre point of the substrate carrier ring (20), characterized in that the substrate carrier ring (20) has insertion openings and the supporting elements (30) have insertion portions, the insertion portions are arranged interchangeably in at least a part of the insertion openings, and the supporting elements have a radial width of 5 mm or less; apparatus for depositing a layer of semiconductor material on a substrate wafer (40); and a method for depositing an epitaxial layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyj0KAjEQBtBtLES9w3gAQddFbUX86V2wXMb47SaQTUJmgtfXwgNYveZNq-u9iEHSmOnt1JILimwshwH89CApKcWsLgwEjxFBhTi8qAiEYk9qv4dHzKtJz16w-Dmrlpdze7qtkGIHSWwQoF37qNd1szk0u_1x-8_5ALidNI0</recordid><startdate>20240501</startdate><enddate>20240501</enddate><creator>VORDERWESTNER, MARTIN</creator><creator>MOOS, PATRICK</creator><scope>EVB</scope></search><sort><creationdate>20240501</creationdate><title>Susceptor with interchangeable supporting elements and uses of the same</title><author>VORDERWESTNER, MARTIN ; MOOS, PATRICK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202418467A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>VORDERWESTNER, MARTIN</creatorcontrib><creatorcontrib>MOOS, PATRICK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VORDERWESTNER, MARTIN</au><au>MOOS, PATRICK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Susceptor with interchangeable supporting elements and uses of the same</title><date>2024-05-01</date><risdate>2024</risdate><abstract>Susceptor for an apparatus for depositing a layer of semiconductor material on a substrate wafer (40), wherein the susceptor comprises a susceptor plate and at least one substrate holder (5) for a substrate wafer (40) on the susceptor plate, the at least one substrate holder (5) has a discoid lower part (10), a substrate carrier ring (20), and supporting elements (30), and the supporting elements (30) are arranged concentrically around the ring centre point of the substrate carrier ring (20), characterized in that the substrate carrier ring (20) has insertion openings and the supporting elements (30) have insertion portions, the insertion portions are arranged interchangeably in at least a part of the insertion openings, and the supporting elements have a radial width of 5 mm or less; apparatus for depositing a layer of semiconductor material on a substrate wafer (40); and a method for depositing an epitaxial layer.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Susceptor with interchangeable supporting elements and uses of the same |
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