High electron mobility transistor and high electron mobility transistor semiconductor device

Capacitance networks for enhancing high voltage operation of high electron mobility transistors (HEMTs) are presented herein. A capacitance network, integrated and/or external, may be provided with a fixed number of capacitively coupled field plates to distribute the electric field in the drift regi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	VARADARAJAN, KAMAL RAJ, YANG, ROBERT KUOANG, GEORGESCU, SORIN S, KUDYMOV, ALEXEY
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS SEMICONDUCTOR DEVICES
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