Semiconductor device

A semiconductor device includes a first active pattern on a substrate, the first active pattern extending in a third direction having an acute angle with respect to a first direction and a second direction, the first direction and the second direction being substantially parallel to an upper surface...

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Hauptverfasser: PARK, JONG-YOUNG, KOH, TAE-YOUNG, KIM, JAE-HYUN, KIM, KI-YONG, PARK, JIN-GYU, KIM, SUN-DOO
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Sprache:chi ; eng
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creator PARK, JONG-YOUNG
KOH, TAE-YOUNG
KIM, JAE-HYUN
KIM, KI-YONG
PARK, JIN-GYU
KIM, SUN-DOO
description A semiconductor device includes a first active pattern on a substrate, the first active pattern extending in a third direction having an acute angle with respect to a first direction and a second direction, the first direction and the second direction being substantially parallel to an upper surface of the substrate and substantially perpendicular to each other, a first conductive filling pattern on an upper surface of a central portion of the first active pattern, the first conductive filling pattern having a shape of a parallelogram, a gate structure extending in the first direction in an upper portion of the first active pattern, and a bit line structure on the first conductive filling pattern and extending in the second direction.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202412271A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202412271A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202412271A3</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfEh4UYGRiaGRkbmho7GxKgBAGHpIQg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>esp@cenet</source><creator>PARK, JONG-YOUNG ; KOH, TAE-YOUNG ; KIM, JAE-HYUN ; KIM, KI-YONG ; PARK, JIN-GYU ; KIM, SUN-DOO</creator><creatorcontrib>PARK, JONG-YOUNG ; KOH, TAE-YOUNG ; KIM, JAE-HYUN ; KIM, KI-YONG ; PARK, JIN-GYU ; KIM, SUN-DOO</creatorcontrib><description>A semiconductor device includes a first active pattern on a substrate, the first active pattern extending in a third direction having an acute angle with respect to a first direction and a second direction, the first direction and the second direction being substantially parallel to an upper surface of the substrate and substantially perpendicular to each other, a first conductive filling pattern on an upper surface of a central portion of the first active pattern, the first conductive filling pattern having a shape of a parallelogram, a gate structure extending in the first direction in an upper portion of the first active pattern, and a bit line structure on the first conductive filling pattern and extending in the second direction.</description><language>chi ; eng</language><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240316&amp;DB=EPODOC&amp;CC=TW&amp;NR=202412271A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240316&amp;DB=EPODOC&amp;CC=TW&amp;NR=202412271A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARK, JONG-YOUNG</creatorcontrib><creatorcontrib>KOH, TAE-YOUNG</creatorcontrib><creatorcontrib>KIM, JAE-HYUN</creatorcontrib><creatorcontrib>KIM, KI-YONG</creatorcontrib><creatorcontrib>PARK, JIN-GYU</creatorcontrib><creatorcontrib>KIM, SUN-DOO</creatorcontrib><title>Semiconductor device</title><description>A semiconductor device includes a first active pattern on a substrate, the first active pattern extending in a third direction having an acute angle with respect to a first direction and a second direction, the first direction and the second direction being substantially parallel to an upper surface of the substrate and substantially perpendicular to each other, a first conductive filling pattern on an upper surface of a central portion of the first active pattern, the first conductive filling pattern having a shape of a parallelogram, a gate structure extending in the first direction in an upper portion of the first active pattern, and a bit line structure on the first conductive filling pattern and extending in the second direction.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfEh4UYGRiaGRkbmho7GxKgBAGHpIQg</recordid><startdate>20240316</startdate><enddate>20240316</enddate><creator>PARK, JONG-YOUNG</creator><creator>KOH, TAE-YOUNG</creator><creator>KIM, JAE-HYUN</creator><creator>KIM, KI-YONG</creator><creator>PARK, JIN-GYU</creator><creator>KIM, SUN-DOO</creator><scope>EVB</scope></search><sort><creationdate>20240316</creationdate><title>Semiconductor device</title><author>PARK, JONG-YOUNG ; KOH, TAE-YOUNG ; KIM, JAE-HYUN ; KIM, KI-YONG ; PARK, JIN-GYU ; KIM, SUN-DOO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202412271A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><toplevel>online_resources</toplevel><creatorcontrib>PARK, JONG-YOUNG</creatorcontrib><creatorcontrib>KOH, TAE-YOUNG</creatorcontrib><creatorcontrib>KIM, JAE-HYUN</creatorcontrib><creatorcontrib>KIM, KI-YONG</creatorcontrib><creatorcontrib>PARK, JIN-GYU</creatorcontrib><creatorcontrib>KIM, SUN-DOO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PARK, JONG-YOUNG</au><au>KOH, TAE-YOUNG</au><au>KIM, JAE-HYUN</au><au>KIM, KI-YONG</au><au>PARK, JIN-GYU</au><au>KIM, SUN-DOO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2024-03-16</date><risdate>2024</risdate><abstract>A semiconductor device includes a first active pattern on a substrate, the first active pattern extending in a third direction having an acute angle with respect to a first direction and a second direction, the first direction and the second direction being substantially parallel to an upper surface of the substrate and substantially perpendicular to each other, a first conductive filling pattern on an upper surface of a central portion of the first active pattern, the first conductive filling pattern having a shape of a parallelogram, a gate structure extending in the first direction in an upper portion of the first active pattern, and a bit line structure on the first conductive filling pattern and extending in the second direction.</abstract><oa>free_for_read</oa></addata></record>
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title Semiconductor device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T20%3A06%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PARK,%20JONG-YOUNG&rft.date=2024-03-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202412271A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true